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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS(on) = 200 V = 58 A = 40 mW trr 200 ns Maximum Ratings 200 200 20 30 58 232 58 30 1.0 5 300 -55 ... +150 150 -55 ... +150 300 6 4 V V V V A A A mJ J V/ns W C C C C g g TO-268 (D3) (IXFT) Case Style G S (TAB) TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain Features l l l 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 200 2.0 4.0 100 25 1 40 V V nA A mA m l l l IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space savings High power density (c) 1999 IXYS All rights reserved 98523A (5/99) IXFH IXFT Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 24 34 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 870 280 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External) 40 40 13 98 140 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 45 35 70 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Terminals: 1 - Gate 3 - Source 1 2 3 58N20Q 58N20Q TO-247 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 58 232 1.5 200 A A V ns C A Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS-di/dt = 100 A/s, VR = 100 V 0.7 7 Min. Recommended Footprint Dimensions in mm and inches IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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